We demonstrate the growth of high-quality GaN films with flat surface and uniform morphology on large-scale polycrystalline chemical vapor-deposited graphene films. The films exhibit stimulated emission even at room temperature, a highly c-axis-oriented crystal structure, and a preferred in-plane orientation. Furthermore, the GaN films grown on the graphene films can be used for fabrication of blue and green light-emitting diodes.
- Kunook Chung
- Suk In Park
- Gyu-Chul Yi
