Schematic illustration of retention framework for solution-processed indium zinc oxide (IZO) thin film transistors (TFTs). Indium-rich compositions generate shallow In–O related weak bonds states, leading to irreversible charge trapping and extended retention lifetime. This can be verified by the electrical charges observed after post-treatments, and the retention lifetime can be quantitatively modeled based on detailed characterization.
- Dongwook Kim
- Hyeonju Lee
- Jaehoon Park
