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A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers

A hole-dominant AlInP/GaInP double quantum well can be used to create red micro-light-emitting diode pixels with high internal quantum efficiency at low drive currents, as well as minimized size-dependent quantum efficiency shifts, allowing high-resolution active-matrix displays to be integrated on silicon complementary metal–oxide–semiconductor backplanes.

Juhyuk Park
Woojin Baek
Sanghyeon Kim
Research20 Jan 2026
Nature Electronics

P: 1-10
Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms

The power consumption of control/readout electronics remains a limiting factor for large-scale quantum computers. Here, the authors demonstrate III–V semiconductor and Nb superconductor-based cryogenic electronics integrated on silicon for large-scale quantum computing systems.

Jaeyong Jeong
Seong Kwang Kim
Sanghyeon Kim
ResearchOpen Access30 Dec 2024
Nature Communications

Volume: 15, P: 1-10
Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

The size-dependent efficiency degradation issues of micro-light-emitting diodes are obstacles for efficient microdisplays development. Here, Baek et al. demonstrate an epitaxial engineering strategy to alleviate the efficiency degradations and achieve low operating temperature of pixels.

Woo Jin Baek
Juhyuk Park
Sang Hyeon Kim
ResearchOpen Access17 Mar 2023
Nature Communications

Volume: 14, P: 1-11
Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications

This work demonstrates a room-temperature waveguide-integrated mid-infrared (>4 µm) photodetector on a Ge-on-insulator platform using the bolometric effect. It achieves ultrabroadband responsivity and label-free gas sensing on a monolithic chip with a CMOS-compatible solution.

Joonsup Shim
Jinha Lim
SangHyeon Kim
ResearchOpen Access19 Mar 2025
Light: Science & Applications

Volume: 14, P: 1-12
Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Sub-micron-thick InGaAs PD using guided-mode resonance for advanced high-resolution SWIR image sensors for wide band, high efficiency, and low X-talk

Dae-Myeong Geum
Jinha Lim
SangHyeon Kim
ResearchOpen Access15 Nov 2024
Light: Science & Applications

Volume: 13, P: 1-12

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A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers

Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms

Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications

Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

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