Dynamic disorder reduces the carrier mobility in organic semiconductors (OSs) to an extent that depends on their specific electronic band structure. Here the authors study the temperature-dependent hole mobility of two structurally similar OSs and find that thermal access to transiently delocalized states enhances hole mobility in C8-DNTT-C8 compared to DNTT.
- Samuele Giannini
- Lucia Di Virgilio
- David Beljonne
