As alternative technologies for non-volatile memory elements are looked at, the utilization of ferroelectric layers to read-write upon is seen as promising. However, it is plagued by several problems, including a destructive readout process. Now, by using a thin layer of BaTiO3 put under intense strain, it has been shown possible to read out the polarization state of the material without destroying it.
- V. Garcia
- S. Fusil
- M. Bibes