We demonstrate the magnetic-field induced reversal of antiferromagnetic spins and the electric field modulation of the switching field. The modulation efficiency is significantly high, greater than 4 T nm/V, and this giant modulation efficiency is attributed to the magnetoelectric effect of the antiferromagnetic Cr2O3. The magnetoelectric (ME) based mechanism provides a scheme for the energy-efficient, nonvolatile, deterministic 180° switching of the magnetic state in the pure antiferromagnetic (AFM) component. This study represents a great advancement in the AFM-based ME random access memory with ultralow writing power, an inherently fast switching speed and superior robustness to the magnetic state.
- Kakeru Ujimoto
- Hiroki Sameshima
- Yu Shiratsuchi
