Magnetoresistance, where the electric resistance of a material changes under an applied magnetic field, is typically an even function of the applied magnetic field, due to the combination of time reversal and spatial inversion symmetries. Here, Takiguchi et al show an odd-parity magnetoresistance of remarkable size in edge channels of a semiconductor quantum well.
- Kosuke Takiguchi
- Le Duc Anh
- Masaaki Tanaka
