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Showing 1–10 of 10 results
Advanced filters: Author: M. S. Rzchowski Clear advanced filters

  • The integration of oxide nanoelectronics with silicon platforms is a necessary step for the fabrication of ultrahigh-density devices. Here, the authors grow a LaAlO3/SrTiO3interface directly on silicon, and show the reversible creation of a two-dimensional electron gas confined within nanowires located on the surface.

    • J.W. Park
    • D.F. Bogorin
    • C.B. Eom
    Research
    Nature Communications
    Volume: 1, P: 1-7

  • A spin–orbit torque efficiency of around 2.7 can be achieved in heterostructures based on the bismuthate BaPb1−xBixO3, which can be used to drive magnetization switching at current densities of 4 × 105 A cm−2.

    • Anthony L. Edgeton
    • Isaac A. Harris
    • Chang-Beom Eom
    Research
    Nature Electronics
    Volume: 6, P: 973-980

  • Magnetic vortices formed in antiferromagnetic haematite and imprinted on a Co ferromagnetic over-layer have been observed using X-ray magnetic linear and circular dichroism photoemission electron microscopy. These vortex pairs can be manipulated by the application of magnetic fields.

    • F. P. Chmiel
    • N. Waterfield Price
    • P. G. Radaelli
    Research
    Nature Materials
    Volume: 17, P: 581-585

  • In the typical spin-hall effect, spin-current, charge current, and spin polarisation are all mutually perpendicular, a feature enforced by symmetry. Here, using an anti-ferromagnet with a triangular spin structure, the authors demonstrate a spin-hall effect without a perpendicular spin alignment.

    • T. Nan
    • C. X. Quintela
    • C. B. Eom
    ResearchOpen Access
    Nature Communications
    Volume: 11, P: 1-7

  • Multiferroics are promising for their ability to use an electric polarization to control magnetism and vice versa. However, ferroelastic effects during the switching of multiferroics such as BiFeO3 destabilize the ferroelectric state. A new approach for the switching of these sorts of compound may now represent a solution to this problem.

    • S. H. Baek
    • H. W. Jang
    • C. B. Eom
    Research
    Nature Materials
    Volume: 9, P: 309-314

  • Exchange coupling between ferromagnetic and multiferroic materials is a key to magnetoelectric devices but hard to achieve macroscopically. Here, the authors report room–temperature robust and reproducible magnetoelectric switching in Co/BiFeO3 heterostructures with monodomain properties over the entire sample at room temperature.

    • W. Saenrang
    • B. A. Davidson
    • C. B. Eom
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-8

  • Ab initio calculations are used to identify the structural conditions under which a polar state in metals might be stabilized; this information is used to guide the experimental realization of new room-temperature polar metals.

    • T. H. Kim
    • D. Puggioni
    • C. B. Eom
    Research
    Nature
    Volume: 533, P: 68-72

  • A SrTiO3/LaAlO3/SrTiO3 heterostructure is fabricated in high oxygen partial pressure to prevent oxygen vacancy formation. Electrical transport and electron holography directly observes a highly mobile two dimensional hole gas at the top interface.

    • H. Lee
    • N. Campbell
    • C. B. Eom
    Research
    Nature Materials
    Volume: 17, P: 231-236