The scalable synthesis of two-dimensional epitaxial materials on industrially relevant substrates is crucial for advancing next-generation technologies. Here, the authors use molecular beam epitaxy to grow gallium selenide on sapphire, constructing a growth mode diagram that guides the synthesis of specific phases and morphologies, thereby serving as a tool to identify and optimize the growth conditions of other metal chalcogenide materials.
- Michele Bissolo
- Marco Dembecki
- Gregor Koblmüller
