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Showing 1–4 of 4 results
Advanced filters: Author: Moaz Waqar Clear advanced filters

  • Maximizing the electromechanical response is crucial for developing piezoelectric devices. Here, the authors demonstrate a giant electric-field-induced strain and its origin in alkali niobate epitaxial thin films with self-assembled planar faults.

    • Moaz Waqar
    • Haijun Wu
    • John Wang
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-9

  • Phase boundary engineering through chemical alloying and phase control is a traditional approach to enhancing piezoelectric properties. Here, the authors design a strategy in alkali niobate films, utilizing alkali vacancies without alloying to form nanopillars enclosed.

    • Haijun Wu
    • Shoucong Ning
    • Stephen J. Pennycook
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-8

  • Neuromorphic computing requires the realization of high-density and reliable random-access memories. Here, Thean et al. demonstrate wafer-scale integration of solution-processed 2D MoS2 memristor arrays which show long endurance, long memory retention, low device variations, and high on/off ratio.

    • Baoshan Tang
    • Hasita Veluri
    • Aaron V-Y. Thean
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-9

  • Strain relaxation in BaTiO₃ thin films integrated on Si affects electro-optic performance but remains poorly understood, especially in thick films. Here, the heating and cooling rates during molecular beam epitaxy growth are controlled to tune domain structure, achieving <550 pm/V effective Pockels response.

    • Marc Reynaud
    • Moaz Waqar
    • Alexander A. Demkov
    ResearchOpen Access
    Communications Materials
    Volume: 6, P: 1-8