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Nonreciprocal magneto-transport is often attributed to Zeeman-driven mechanisms. Here, the authors identify Lorentz skew scattering nonreciprocal magneto-transport in BiTeBr which emerges from the cooperation of classical Lorentz force and quantum skew scattering.

Non-reciprocal charge transport refers to the different resistance between positive and negative current, and is fundamental in a variety of applications, for instance, current rectification. Some materials exhibit intrinsic nonreciprocal transport, but manipulation of this can be challenging. Here, the authors demonstrate large non-reciprocal transport which can be switched magnetically, is stacking dependent, and can be tuned via an applied gate voltage.

The nature of localized interlayer excitons (LIXs) in moiré superlattices is still elusive Here, the authors propose a donor-acceptor pair mechanism for LIXs in MoSe₂/WSe₂ heterobilayers.

A molybdenum disulfide/tungsten diselenide van der Waals heterostructure can exhibit a room-temperature valley Hall effect with electrically tunable magnitude and polarity, which can be used to create a bipolar valleytronic transistor.

Recently, the quantum anomalous Hall effect has been successfully achieved in the intrinsic magnetic topological insulator MnBi₂Te₄, but zero-field quantization has proved difficult to achieve due to poor sample quality. Here, the authors report zero-field quantization and chiral edge states in five-septuple-layer MnBi₂Te₄.

Ballistic avalanche phenomena in vertical InSe/BP heterostructures enable the demonstration of high-performance avalanche photodetectors and impact ionization transistors.

Non-radiative decay in two-dimensional WSe₂ quantum emitters is electrically suppressed through charge depletion using dual gate configurations. The single-photon emitter transition quantum efficiency after gating is increased to 76.4 ± 14.6% on average.

Moiré materials, where two van der Waals layers are stacked together with a small twist angle has proven to be a rich playground for exotic phases, with some materials, such as twisted MoTe2 being found to host quantum anomalous and fractional hall states among others. Here, An, Pan, Qiu and coauthors add to this, observing ferromagnetism in the second moiré band of twisted MoTe2.

Quantum-metric-induced nonlinear transport, including the nonlinear anomalous Hall effect and a diode-like response, is observed in thin films of a topological antiferromagnet, providing a means to design magnetic nonlinear devices.

The authors demonstrate magnetic-field-free electric switching of superconducting nonreciprocity in Fe₃GeTe₂/NbSe₂ heterostructures. They apply this to propose and demonstrate a proof-of-concept “neural transistor”, a tetrode device that realizes an XOR gate with only a single transistor.

A new type of Hall effect—the layer Hall effect—is produced in a 2D antiferromagnet that does not exhibit any net magnetization.

The second order nonlinear Hall effect leads to a direct voltage generated from the rectification effect. While this rectification property is appeal for use in devices, most materials exhibiting a second order nonlinear hall effect are constrained to low temperatures. Here, Lu et al demonstrate a second order nonlinear transport behaviour that persists above room temperature in BiTeBr, and construct a prototype rectifier based on this effect.

Nonlinear responses in transport measurements can unveil specific material properties not accessible with linear measurements. In thick T_d-MoTe₂ samples, a third-order nonlinear Hall effect dominates over lower-order contributions and is linked to the Berry-connection polarizability tensor.

The nonlinear Hall effect enables studies of symmetry and topology with potential in high-frequency devices, but practical applications demand room temperature operation. The authors report robust room temperature nonlinear transverse responses and microwave rectification (1–8 GHz) in MnBi₂Te₄ thin films, driven by extrinsic spin-orbit scattering.