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Showing 1–6 of 6 results
Advanced filters: Author: Nianduan Lu Clear advanced filters

  • High-density dynamic random access memory is crucial for addressing the memory wall issue, yet its three-dimensional integration faces significant challenges. Liao et al. utilize a single-step self-aligned integration scheme, achieving 4 F² density and demonstrating 4-bit operation.

    • Fuxi Liao
    • Zhengyong Zhu
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-9

  • Thin film transistors with high voltage gains and operating frequencies are required for internet of things applications. Here, the authors report short-channel source-gated transistors based on monolayer MoS2, showing intrinsic gain exceeding 2.4×10³ and cutoff frequencies up to 208 MHz in the subthreshold regime.

    • Menggan Liu
    • Jiebin Niu
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 17, P: 1-10

  • Oxide-based resistive switching memory is known to depend on the formation and rupture of a conducting filament, although the mechanism behind this remains debated. Here, the authors measure the Seebeck effect to understand the intrinsic electronic transport mechanism in the conducting filament.

    • Ming Wang
    • Chong Bi
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 5, P: 1-6

  • The mechanism of nonlinear charge transport in doped conducting polymers remains elusive. Here, Wang et al. study charge transport with respect to crystalline degrees of samples and construct a model based on the tied link between Fermi liquids and Luttinger liquids, providing a universal explanation to understand nonlinear charge transport in conducting polymers.

    • Jiawei Wang
    • Jiebin Niu
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-9

  • Though metallic edge states in monolayer transition metal dichalcogenide have been observed before, how these states contribute to charge transport remains unclear. Here, the authors quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing a dominated non-linear edge transport at low temperature, indicating possible Luttinger liquid behavior.

    • Guanhua Yang
    • Yan Shao
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 11, P: 1-7