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Showing 1–4 of 4 results

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Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO₂

Ali Zavabeti
Patjaree Aukarasereenont
Torben Daeneke
Amendments and Corrections07 Jun 2021
Nature Electronics

Volume: 4, P: 447
Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique

A liquid metal printing technique can be used to create monolayer and bilayer indium tin oxide, with the bilayer samples offering a transparency above 99.3% and a sheet resistance as low as 5.4 kΩ □⁻¹.

Robi S. Datta
Nitu Syed
Torben Daeneke
Research24 Jan 2020
Nature Electronics

Volume: 3, P: 51-58
Printing two-dimensional gallium phosphate out of liquid metal

Two-dimensional piezoelectric materials hold promise for nano-electromechanical technologies, yet it is challenging to prepare them in large areas with high sample homogeneity. Syed et al. surface print GaPO₄ sheets with unit cell thickness over centimetres using a liquid metal-based synthesis process.

Nitu Syed
Ali Zavabeti
Kourosh Kalantar-Zadeh
ResearchOpen Access06 Sept 2018
Nature Communications

Volume: 9, P: 1-10
High-mobility p-type semiconducting two-dimensional β-TeO₂

Bilayer beta tellurium dioxide nanosheets with p-type characteristics can be formed through the surface oxidation of a mixture of tellurium and selenium, and used to create transistors with performance that matches their n-type oxide counterparts.

Ali Zavabeti
Patjaree Aukarasereenont
Torben Daeneke
Research05 Apr 2021
Nature Electronics

Volume: 4, P: 277-283