Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and predict the effects of strongly ionising radiation in gallium nitride, revealing the mechanism behind its unusual resistance to radiation.
- Miguel C. Sequeira
- Jean-Gabriel Mattei
- Katharina Lorenz
