Electrical manipulation of magnetization in devices made of topological materials may be an essential route towards future spintronics technology. Here, Mogi et al. show efficient current-induced switching of surface ferromagnetism in hetero-bilayers of topological insulator (Bi1-xSbx)2Te3 and ferromagnetic insulator Cr2Ge2Te6.
- Masataka Mogi
- Kenji Yasuda
- Yoshinori Tokura
