Antiferromagnetic materials are promising for spintronics as they allow higher device densities, yet reading and writing antiferromagnetic memories remains challenging. Here, the authors employ non-collinear antiferromagnetic Mn₃Sn films and chiral gating to achieve efficient, high-density memory, utilizing the chiral-induced spin selectivity effect to enhance the Hall response and enable robust, reversible memory operations without external magnetic fields.
- Naama Goren
- Binoy Krishna Hazra
- Yossi Paltiel
