The field effect tunability of 2D semiconductors is at the basis of their technological appeal, but it is usually implemented via electrostatic gating. Here, the authors demonstrate an ultrafast THz field effect in 2D MoS2 embedded in a nanoantenna converting the incident radiation field into an out-of-plane electric field of ~ MV/cm scale.
- Tomoki Hiraoka
- Sandra Nestler
- Dmitry Turchinovich
