Organic field-effect transistors with a self-doped (SD) polyaniline charge-trapping energy well structure exhibit outstanding nonvolatile memory characteristics. The charges generated by the field-effect operation are effectively stored in the SD poly(o-anthranilic acid) charge-trapping energy well layer so that the present memory transistor performs excellent data writing–reading–erasing functions with highly stable data retention characteristics.
- Sungho Nam
- Yong-Gi Ko
- Youngkyoo Kim
