The formation of the conductive region (n+ layer) in (Zn,Ba)SnO3 (ZBTO) semiconductor is proposed to achieve high performance of thin-film transistors (TFTs). The aluminum metal capping layer is adopted to enhance the field-effect mobility of ZBTO TFTs. The capped Al layer takes out oxygen in the back-channel region, where the AlOx interlayer is formed. As a result, the field-effect mobility of Al-capped ZBTO TFTs is remarkably increased from 20.8 to 153.4 cm2/Vs. Furthermore, the Al-capped ZBTO TFTs are stable even when exposed to air for 3 months.
- Ji-Min Park
- Hyoung-Do Kim
- Hyun-Suk Kim
