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An atomic single electron transistor, which utilizes a single atomic defect in a van der Waals material as an ultrasensitive, high-resolution potential sensor, is used to image the electrostatic potential within a moiré unit cell.

Pseudo-Landau levels in strained graphene modify not only the local density of states, but also the transport through a Hall bar device.

The mechanisms responsible for the strongly correlated insulating and superconducting phases in twisted bilayer graphene are still debated. The authors provide a theory for phonon-dominated transport that explains several experimental observations, and contrast it with the Planckian dissipation mechanism.

Graphene doesn’t usually have a bandgap but one can appear when the two-dimensional material is placed on a hexagonal boron nitride substrate. Jung et al. now develop a theory that indicates that this occurs because the graphene’s carbon atoms structurally relax when placed on boron nitride.

Atomically thin sheets of graphite are metal-like conductors — until they react with hydrogen, when they become insulators. This curious effect could be an excellent model for studying metal–insulator transitions.

In graphene, two particular sets of electrons exist that have a fourfold energy degeneracy. To study the corresponding four quantum states comprising a Landau level, these authors perform measurements on epitaxial graphene at 10 millikelvin. They take spectral 'fingerprints' of the Landau levels, showing in detail how they evolve with magnetic field and how they split into the four separate quantum states. They also observe states with Landau level filling factors of 7/2, 9/2 and 11/2.

Despite their name, the bulk electrical conductivity of most topological insulators is relatively high, masking many of the important characteristics of its protected, surface conducting states. Counter-doping reduces the bulk conductivity of Bi₂Se₃ significantly, allowing these surface states and their properties to be clearly identified.

Scanning tunnelling microscopy of doped RuCl₃ shows distinct charge orderings at the lower and upper Hubbard bands, which can be attributed to a correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and a rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru–Ru bonds.

The reliable fabrication of 2D heterostructures with controllable moiré patterns is important for the investigation of their emergent physical properties. Here, the authors report an alignment technique enabling the fabrication of double-aligned hBN/graphene/hBN supermoiré lattice structures with a yield close to 100%.

A structure of monolayer and bilayer graphene with a small twist between them shows correlated insulating states that can be tuned by changing the twist angle or applying an electric field.

Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS₂ couples to their electronic structure, affecting magnetotransport.

An electrically controlled phase transition from topological insulator to conventional insulator in ultrathin films of the topological Dirac semimetal, Na₃Bi.

For appropriately aligned layers of different two-dimensional materials, the separation between layers—and hence the interlayer coupling—is very sensitive to pressure, leading to pressure-induced changes in the electronic properties of the heterostructures.

Here, authors report spin transport in dual-gated, high-mobility bilayer graphene spin valves. Their comparative study suggests that substrate and contacts are not the key limiting sources for spin relaxation, but rather it pinpoints the role of polymer residues in current devices. Spin transport in bilayer graphene is gate tunable and this allows authors to demonstrate the evidence of magnetic moments which act as spin hot spots. By taking the advantage of their novel device architecture, they demonstrate the complete suppression of the spin signal while a transport gap was induced in these spin valve devices.

An understanding of the interlayer electronic interactions in two dimensional heterostructures is required to advance their potential applications in low-power electronics. The authors develop a transport theory incorporating charge inhomogeneities in order to explain the behavior of Coulomb drag observed experimentally in double layer heterostructures.