The integration of 2D semiconductors with high-κ dielectrics is an important requirement for the development of post-silicon electronics. Here, the authors report the thickness-controlled growth of MoO3 nanoflakes with equivalent oxide thickness down to 0.9 nm, and their application for the realization of 2D electronic devices.
- Xueming Li
- Shankun Xu
- Nengjie Huo
