A solution to performance related challenges posed by nanoscale field effect transistors is to consider atomically thin impurity layers in Si-based devices however there are many aspects of the conductive properties that are still unknown. Here, the authors develop an open system quantum transport method to investigate the local density electronic states of P-doped Si revealing the role of scattering, thickness and doping density.
- Denis Mamaluy
- Juan P. Mendez
- Shashank Misra
