The multihole mechanism of the oxygen evolution reaction on semiconductor electrodes has been hard to elucidate due to a lack of atomic-scale structural characterization of the material interface. Using pulse voltammetry and simulations of α-Fe2O3 photoanodes, this study predicts the chemical origin of the third-order rate dependence on holes.
- Giulia Righi
- Julius Plescher
- Simone Piccinin
