A TiO2/Al2O3 bilayer memristor exhibits filament-based gradual dual resistive switching through the filament dynamics in Al2O3 and resistive modulation of TiO2. The device supports quasi-symmetric spike-timing-dependent plasticity (STDP) and anti-STDP without explicit mode switching, delivers 95% functional yield and less than 3% switching variation, and enables reliable bidirectional synaptic updates in crossbar arrays under identical spike inputs. Simulations based on experimentally extracted device parameters achieve 84.5% MNIST classification accuracy. These results demonstrate a scalable, cost-effective and CMOS-compatible platform for neuromorphic hardware.
- Woohyeon Ryu
- Suman Hu
- Bae Ho Park
