Quasi-free-standing trilayer graphene with ABA or ABC stacking was selectively synthesized on hydrogen-terminated silicon carbide. The electronic structure was investigated by angle-resolved photoemission spectroscopy. While ABA graphene exhibits a massless Dirac-cone-like band at the K point in the Brillouin zone, ABC graphene was found to show a parabolic non-Dirac-like band. The present success in selective fabrication of ABA and ABC graphene would open a pathway toward graphene-based nano electronic devices with variable layer number and stacking sequence such as high-speed transistor and photodetector.
- Katsuaki Sugawara
- Norifumi Yamamura
- Takashi Takahashi
