Using a thermal evaporation approach and lead chloride (PbCl2) as a reaction initiator, caesium tin iodide (CsSnI3)-based p-channel thin-film transistors can be fabricated that exhibit average hole field-effect mobilities of around 33.8 cm2 V−1 s−1 and improved stability compared with solution-deposited devices.
- Youjin Reo
- Taoyu Zou
- Yong-Young Noh
