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Intrinsically stretchable electronic devices are interesting for wearable electronics, soft robotics, and stretchable display applications. Here, the authors report the fabrication of intrinsically stretchable solution-processed thin-film transistors based on 2D MoS₂ flakes, showing high performance and stability under strain up to 20%.

2D semiconductors hold promise for the fabrication of high-density flexible integrated circuits, but they often require high-temperature processing or transfer steps. Here, the authors report the low-temperature ( ≤ 150 °C) fabrication of wafer-scale 3Dintegrated flexible complementary circuits based on 2D semiconductor inks.

Using a thermal evaporation approach and lead chloride (PbCl₂) as a reaction initiator, caesium tin iodide (CsSnI₃)-based p-channel thin-film transistors can be fabricated that exhibit average hole field-effect mobilities of around 33.8 cm² V⁻¹ s⁻¹ and improved stability compared with solution-deposited devices.

A pioneering design strategy for amorphous p-type semiconductors can be used in high-performance, stable p-channel TFTs and complementary circuits, which may establish viable amorphous p-channel TFT technology and large-area complementary electronics in a low-cost manner.

The growth of stable and high-mobility semiconductors using industry-compatible methods still attracts interest in electronics community. Here, Noh et al. report wafer-scale ultrathin Bi₂S₃ and Te semiconductors for high-performance complementary electronics using room temperature thermal evaporation.

Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm²V^–1S^–1, which can be integrated with commercial metal oxide transistors on a single chip.

By optimizing the doping and crystallization behaviour of solution-processed metal halide perovskite thin films, p-channel transistors with mobilities of 50 cm² V^–1 s^–1 and on/off ratios of 10⁸ can be fabricated.

Colloidal quantum dots are promising for next-generation displays, yet the technology to realise high-resolution and uniform patterning is still scarce. Here, the authors report full-colour QD large area patterning by combining photolithography and selective electrophoretic deposition technique.

Controlling molecular spin quantum bits optically could help us reduce decoherence and raise the working temperature of quantum computing. Here we show theoretically exchange interactions and spin dynamics could be mediated by optically driven triplet state, leading to quantum gate operations. This indicates a great potential for radical as molecular building block for quantum circuits. A molecular quantum architecture, combining molecular network and nano-photonics, was also proposed. We thus expect the computational exploration of chemical database for molecular quantum computing. This work would therefore open up a new direction to use optical instruments and ‘Click Chemistry’ towards molecular quantum technology.

An illustration of the optically controlled entanglement between a radical spin and a triplet state on an optically active moiety such as a phthalocyanine molecule. The optical excitations and the resulting strong exchange interactions, in combination with the recent spin manipulation in molecules at high temperature, imply this entangling mechanism has a great potential for room temperature quantum computing.