Exchange bias occurs in a variety of magnetic materials and heterostructures. The quintessential example occurs in antiferromagnetic/ferromagnetic heterostructures and has been employed extensively in magnetic memory devices. Here, via a specific field training protocol, the authors demonstrate an exchange bias of up to 400mT in odd layered MnBi2Te4.
- Su Kong Chong
- Yang Cheng
- Kang L. Wang
