Nature Search

Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor

Hidemi Toyosaki
Tomoteru Fukumura
Masashi Kawasaki
Research21 Mar 2004
Nature Materials

Volume: 3, P: 221-224
Possible ferroelectricity in perovskite oxynitride SrTaO₂N epitaxial thin films

Daichi Oka
Yasushi Hirose
Tetsuya Hasegawa
ResearchOpen Access16 May 2014
Scientific Reports

Volume: 4, P: 1-6
Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe₂ and 1T-NbSe₂

Monolayer transition metal dechalcogenides are a promising platform to study the interplay of low-dimensionality and electron correlations. Here, the authors report a Mott insulator state in monolayer 1T-TaSe₂, that survives far above room temperature and is robust against external perturbations.

Yuki Nakata
Katsuaki Sugawara
Takafumi Sato
ResearchOpen Access07 Oct 2021
Nature Communications

Volume: 12, P: 1-9
Heterospin frustration in a metal-fullerene-bonded semiconductive antiferromagnet

Conductive and magnetically frustrated solids may enable the development of high-performance molecule-based spintronic devices. Here the authors report a conductive and magnetically frustrated metal–fullerene-bonded framework prepared from a redox-active dinuclear copper complex and lithium ion-encapsulated fullerenes.

Yongbing Shen
Mengxing Cui
Masahiro Yamashita
ResearchOpen Access25 Jan 2022
Nature Communications

Volume: 13, P: 1-9
Charge-density wave associated with higher-order Fermi-surface nesting in monolayer VS₂

Tappei Kawakami
Katsuaki Sugawara
Takafumi Sato
ResearchOpen Access02 May 2023
npj 2D Materials and Applications

Volume: 7, P: 1-9
Electron localization induced by intrinsic anion disorder in a transition metal oxynitride

Anderson localisation is a well-known phenomenon in condensed-matter physics, which is driven by disorder and can be an important factor in the low-temperature properties for a wide range of systems. Here, the authors describe how a metal-insulator transition can be induced by anion disorder in the perovskite oxynitride SrNbO₂N.

Daichi Oka
Yasushi Hirose
Tetsuya Hasegawa
ResearchOpen Access17 Dec 2021
Communications Physics

Volume: 4, P: 1-8

Quick links

Search

Filter By:

Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor

Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Heterospin frustration in a metal-fullerene-bonded semiconductive antiferromagnet

Charge-density wave associated with higher-order Fermi-surface nesting in monolayer VS2

Electron localization induced by intrinsic anion disorder in a transition metal oxynitride

Search

Quick links

Possible ferroelectricity in perovskite oxynitride SrTaO₂N epitaxial thin films

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe₂ and 1T-NbSe₂

Charge-density wave associated with higher-order Fermi-surface nesting in monolayer VS₂