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Showing 1–2 of 2 results
Advanced filters: Author: Tsung-Yeh Yang Clear advanced filters
  • A readout scheme for quantum devices, which is inspired by one-transistor–one-capacitor dynamic random access memory and consists of CMOS field-effect transistors and quantum dots, could reduce the number of input lines per qubit and allow large-scale device arrays to be addressed.

    • Simon Schaal
    • Alessandro Rossi
    • M. Fernando Gonzalez-Zalba
    Research
    Nature Electronics
    Volume: 2, P: 236-242