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  • Here authors show that gamma/beta double polymorph Ga2O3 structures exhibit unprecedently high radiation tolerance accommodating disorder equivalent to hundreds of displacements per atom. Thus, such Ga2O3 structures benchmark a new class of radiation tolerant semiconductors.

    • Alexander Azarov
    • Javier García Fernández
    • Andrej Kuznetsov
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-8