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Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography

By using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, Cao et al. report ultra-high precision nano additive manufacturing of 2D and 3D metal oxide semiconductors with dimension down to 35 nm.

Chun Cao
Xianmeng Xia
Xu Liu
ResearchOpen Access25 Oct 2024
Nature Communications

Volume: 15, P: 1-11

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Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography

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