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The authors develop a polyvinylidene fluoride and mica bimorph to enhance pyroelectric response. The secondary pyroelectric contribution employs interfacial thermal stress to improve the pyroelectric performance for flexible electronics.

Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe₂ pn homojunction on a supporting ferroelectric BiFeO₃ substrate.

Miniature of electronic devices is attractive yet challenging due to structural variation at nanoscale. Here, Gao et al. report atomic imaging of reconstruction and unusual domain walls on Pb(Zr_0.2Ti_0.8)O₃surfaces, providing possibilities to engineer nanoscale structural change.

We present a promising technique for transparent flexible conducting oxide heteroepitaxial films: the direct fabrication of epitaxial molybdenum-doped indium oxide (IMO) thin films on a transparent flexible muscovite substrate. An n-type epitaxial IMO film is demonstrated with a mobility of 109 cm² V⁻¹ s⁻¹, a figure of merit of 0.0976 Ω⁻¹, a resistivity of 4.5 × 10⁻⁵ Ω cm and an average optical transmittance of 81.8% in the visible regime. IMO heterostructure not only exhibits excellent performance but also shows excellent mechanical durability. This study demonstrated an extraordinary achievement for the evolution and expansion of next-generation smart devices.

The periodic domain pattern of BiFeO₃ enables the anisotropic superconductivity in YBa₂Cu₃O_7 − x. In this work, we introduce a design of periodic multiferroic domain patterns to create the anisotropic superconductivity. High T_C can be found when we measured the resistance parallel to the domain wall direction and the broader transition with lower T_C is found to be perpendicular to the domain walls. (a) and (b) the resistance versus temperature in YBa₂Cu₃O_7 − x/BiFeO₃ heterostructures with two different domain patterns 109° and 71°, respectively.

Multiferroic materials are of interest because they allow control of their magnetic properties through electric fields. However, room-temperature magnetoelectrics often show antiferromagnetic order, reducing the effects of such coupling. A novel approach demonstrates switchable electric field control over a local magnetic field through the indirect route of exchange bias.

Freestanding membranes of hafnium zirconium oxide can be created using pulsed laser deposition method and used as the top-gate dielectric in molybdenum disulfide transistors.

In this work we report the electrical polarization can be induced by composition-graded LaAlO₃-SrTiO₃ solid solution. The analysis indicates that the induced polarization is attributed to the flexoelectric effect in the compositional gradient system. By a suitable combination of compositional gradient in geometry, a local conduction can be created and manipulated, delivering a new approach to obtain unveiled properties. delivering a new pathway to acquire material genome based on material inhomogeneity.

Bi₂O₂Se is a promising 2D semiconductor with high electron mobility and native high-k dielectric layers, but its p-type doping remains challenging. Here, the authors report a low-temperature substitutional doping method to fabricate 2D Bi₂O₂Se p-n junctions and p-type transistors

The fabrication and development of high-entropy alloys (HEAs) with exceptional functionalities is a rapidly expanding field. The extrinsic factors, such as the existence of grains and different phases, would complicate understanding the physical phenomena. We classified the epitaxial system into atomic-site disordered (ASD) and amorphous system into structurally disordered (SD) states, respectively, to exclude the extrinsic effects of HEAs. With a comprehensive study of the magnetic and transport properties, we can further promote the research of high entropy systems.

Magnetoelectric materials combine ferroelectric and magnetic properties through a coupling of the spin and lattice degrees of freedom. Here, magnetoelectric bismuth ferrite is found to simultaneously undergo both a magnetic and a ferroelectric transition at the same temperature.

Electrical control of the spin degree of freedom has enabled various vital applications in modern electronic devices, ranging from magnetoelectronics and spintronics to high-frequency devices. We demonstrate a new approach to ‘write’ enhanced magnetization in a single-phase multiferroic thin film by the application of an electric field. The induced magnetization can be controlled with nanoscopic precision via the assistance of scanning probe techniques, thus offering high potential for use in multifunctional, low power consumption and green nanoelectronics.

Self-assembled nanocomposites present opportunities for a range of phase morphologies and desirable properties. Here authors present tuneable self-assembled nanostructures in the SnO2:NiO system; the double-percolated system expands the design of self-assembled oxides for practical applications, e.g. in optoelectronics.

Despite various known topological polar structures, the dynamic property of isolated ones is still poorly understood. Here, the authors show the controlled nucleation and ability to move of isolated three-fold vertices under an applied electric field.

The remote, non-volatile and reversible optical control of ferroic orders is challenging. Here, using laser illumination, multiple orders in epitaxial mixed-phase BiFeO₃ are manipulated deterministically using a thermally driven flexoelectric effect.

The synergy between the field-induced antiferroelectric to ferroelectric phase transition and substrate constraints results in enhanced electromechanical responses.

Light-induced deformation known as photostriction could be used for green energy devices but in most materials the effect is too small to be of practical use. Here, Weiet al. study the photostriction of strontium ruthenate and find photon-induced strain efficiencies of more than one percent.

Shape-memory materials hold great potential for actuators and aims to improve them focus on increasing the maximum strain that they exhibit in response to a stimulus. Here the authors demonstrate a large shape-memory effect in bismuth ferrite, observing a maximum strain of up to 14%.

Ferroelectric reliability must be solved prior to practical non-volatile electronic devices based on magnetoelectric multiferroics. Here, Hsiehet al. report a long lasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal.

Understanding ferroelectricity at reduced dimensions will be important for future sub-nanoscale devices based on ferroelectrics. Using high resolution electron microscopy; Gaoet al., observe the existence of a measurable polarization at a thickness of just 1.5-unit cells

The electromechanical response of thin film ferroelectric devices is considerably influenced by ferroelastic domains. Here, the authors observe that these ferroeleastic domains can be stabilized by dislocations, providing feedback for a better control over the properties of these devices.

A versatile top-down strategy has been shown to produce amorphous oxides through amorphization of corresponding hydroxides. This approach was used to generate various unitary, binary and ternary amorphous oxides for electrocatalytic oxygen evolution.

We developed a self-assembled nanocomposite photoanode composed of epitaxial BiVO₄ (BVO) matrix embedded with WO₃ (WO) mesocrystal for photoelectrochemical (PEC) water splitting in the visible-light regime. The well-defined WO₃-BiVO₄ interface and controllable thickness provide a template for the fundamental understanding of photoactivity in the nanocomposite. The interfacial coupling of the mesocrystal and matrix improves the separation of photoexcited carriers and the properties of charge transfer, resulting in a significantly enhanced PEC performance. The utilization of the interface-to-volume ratio to optimize the charge interaction of the nanocomposite is essential for the advance design of novel mesocrystal-embedded nanocomposite photoelectrodes.

BiFeO₃ has a wide application but the impact of rare-earth substitution for the evolution of the coupling mechanism is unknown. Here, the authors reveal the correlation between ferroelectricity, antiferromagnetism, a weak ferromagnetic moment, and their switching pathways in La-substituted BiFeO₃.

To fully exploit the potential of multiferroic materials the control of their intrinsic degrees of freedom is a prerequisite. Here, the control of spin orientation in strained BiFeO₃ films is demonstrated elucidating the microscopic mechanism of the complex interplay of polar and magnetic order.

The controlled creation of one-dimensional conductive channels at the cores of topological defects in the multiferroic material BiFeO₃ demonstrates that such defects can drive metal–insulator phase transitions, and might provide a route towards high-density information storage.

Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO₃ film resulting from the formation of a field-induced meta-stable twisted domain nucleus.

Two-dimensional electron gases that form in some complex oxide heterostructures may have useful functional behavior due to the interaction of the parent materials. Here the authors show that PZT/STO interfaces can host a spin-polarized electron gas, even though the bulk materials are nonmagnetic.