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Showing 1–11 of 11 results
Advanced filters: Author: Youjin Reo Clear advanced filters

  • 2D semiconductors hold promise for the fabrication of high-density flexible integrated circuits, but they often require high-temperature processing or transfer steps. Here, the authors report the low-temperature ( ≤ 150 °C) fabrication of wafer-scale 3Dintegrated flexible complementary circuits based on 2D semiconductor inks.

    • Taoyu Zou
    • Seongmin Heo
    • Yong-Young Noh
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-10

  • Using a thermal evaporation approach and lead chloride (PbCl2) as a reaction initiator, caesium tin iodide (CsSnI3)-based p-channel thin-film transistors can be fabricated that exhibit average hole field-effect mobilities of around 33.8 cm2 V−1 s−1 and improved stability compared with solution-deposited devices.

    • Youjin Reo
    • Taoyu Zou
    • Yong-Young Noh
    ResearchOpen Access
    Nature Electronics
    Volume: 8, P: 403-410

  • A pioneering design strategy for amorphous p-type semiconductors can be used in high-performance, stable p-channel TFTs and complementary circuits, which may establish viable amorphous p-channel TFT technology and large-area complementary electronics in a low-cost manner.

    • Ao Liu
    • Yong-Sung Kim
    • Yong-Young Noh
    ResearchOpen Access
    Nature
    Volume: 629, P: 798-802

  • The growth of stable and high-mobility semiconductors using industry-compatible methods still attracts interest in electronics community. Here, Noh et al. report wafer-scale ultrathin Bi2S3 and Te semiconductors for high-performance complementary electronics using room temperature thermal evaporation.

    • Ao Liu
    • Huihui Zhu
    • Yong-Young Noh
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-8

  • Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm2V–1S–1, which can be integrated with commercial metal oxide transistors on a single chip.

    • Huihui Zhu
    • Ao Liu
    • Yong-Young Noh
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-8

  • By optimizing the doping and crystallization behaviour of solution-processed metal halide perovskite thin films, p-channel transistors with mobilities of 50 cm2 V–1 s–1 and on/off ratios of 108 can be fabricated.

    • Ao Liu
    • Huihui Zhu
    • Yong-Young Noh
    ResearchOpen Access
    Nature Electronics
    Volume: 5, P: 78-83

  • This Perspective explores the development of metal halide perovskite transistors, examining the properties of halide perovskites and key perovskite transistors, and considering the challenges that exist in developing next-generation electronics and circuits using these devices.

    • Ao Liu
    • Huihui Zhu
    • Yong-Young Noh
    Reviews
    Nature Electronics
    Volume: 6, P: 559-571