Electron-electron interactions are known to play an important role in the in-plane transport properties of graphene-based devices. Here, the authors investigate the role of electron-electron interactions on electrons tunnelling between the layers of a graphene/hBN/graphene tunnel transistor and demonstrate the emergence of a Coulomb gap at low temperatures and in quantising magnetic fields.
- Evgenii E. Vdovin
- Mark T. Greenaway
- Laurence Eaves
