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Edge-feeding synchronous epitaxy of layer-controlled graphene films on heterogeneous catalytic substrates

Few-layer-thick 2D materials offer desirable electronic, thermal and mechanical properties, but their large-scale layer-controlled synthesis is still challenging. Here, the authors report an edge-feeding synchronous epitaxial growth method to synthesize homogeneous A3-sized graphene films with controlled thickness between 2 and 7 layers.

Buhang Chen
Xiongzhi Zeng
Zhongfan Liu
ResearchOpen Access01 Jul 2025
Nature Communications

Volume: 16, P: 1-10
Phonon transition across an isotopic interface

Here, the authors probe the phonon changes across an atomically sharp h-¹⁰BN/h-¹¹BN isotope interface with sub-unit-cell spatial resolution and momentum resolution. The observed phonon delocalization suggests strong electron-phonon coupling at isotopic interface.

Ning Li
Ruochen Shi
Peng Gao
ResearchOpen Access25 Apr 2023
Nature Communications

Volume: 14, P: 1-7
Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Centimetre-sized single-crystal rhombohedral boron nitride layers are achieved through bevel-edge epitaxy, and the resulting material exhibits robust, homogeneous and switchable ferroelectricity with a high Curie temperature.

Li Wang
Jiajie Qi
Xuedong Bai
Research01 May 2024
Nature

Volume: 629, P: 74-79
Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Hongliang Chang
Zhetong Liu
Tongbo Wei
Amendments and CorrectionsOpen Access29 Apr 2022
Light: Science & Applications

Volume: 11, P: 1
Atomic-scale imaging of CH₃NH₃PbI₃ structure and its decomposition pathway

The knowledge of atomic structure and structural instability of hybrid perovskites is crucial to understand their photoelectric properties and failure mechanism. Here, the authors utilise low-dose TEM imaging technique to investigate the atomic structure and decomposition pathway of MAPbI₃ at the atomic scale.

Shulin Chen
Changwei Wu
Peng Gao
ResearchOpen Access17 Sept 2021
Nature Communications

Volume: 12, P: 1-7
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.

Hongliang Chang
Zhetong Liu
Tongbo Wei
ResearchOpen Access07 Apr 2022
Light: Science & Applications

Volume: 11, P: 1-12

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Edge-feeding synchronous epitaxy of layer-controlled graphene films on heterogeneous catalytic substrates

Phonon transition across an isotopic interface

Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Atomic-scale imaging of CH3NH3PbI3 structure and its decomposition pathway

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

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Atomic-scale imaging of CH₃NH₃PbI₃ structure and its decomposition pathway