High dielectric constant (κ) materials compatible with van der Waals materials are desired to promote the development of 2D electronics. Here, the authors report a method to grow Mn3O4 nanosheets exhibiting κ up to 135 and equivalent oxide thickness down to 0.8 nm, enabling the fabrication of high-performance 2D MoS2 transistors.
- Jiashuai Yuan
- Chuanyong Jian
- Wei Liu
