Advancements in spin-orbit-torque magnetic random-access memory require solutions for achieving high density and low power consumption. Here, the authors achieve a significant and simultaneous enhancement of perpendicular magnetic anisotropy and spin-orbit-torque conductivity by inserting an ultrathin gadolinium layer at the β-W/CoFeB interface, positioning rare-earth elements as key multifunctional regulators for efficient spintronic devices.
- Mingzhang Wei
- Ziji Shao
- Tiejun Zhou
