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Showing 1–5 of 5 results
Advanced filters: Author: Zongxia Guo Clear advanced filters

  • The intrinsic robustness to perturbations makes antiferromagnets ideal building blocks for spintronic devices, however, it also manipulation and detection of antiferromagnetic ordering difficult. Here, Xu et al demonstrate an anisotropic tunnelling magnetoresistance in an all-antiferromagnetic tunnel junction.

    • Shijie Xu
    • Zhizhong Zhang
    • Weisheng Zhao
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-9

  • The authors reveal that even within a few-nanometre thin films, ultrafast all-optical magnetisation switching is spatially inhomogeneous along the depth and driven by the picosecond propagation of a transient domain boundary.

    • Martin Hennecke
    • Daniel Schick
    • Stefan Eisebitt
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-10

  • Antiferromagnetism of the IrMn layer in Pt/IrMn/CoFeB/MgO/CoFeB three-terminal magnetic tunnel junctions can be electrically detected using tunnelling magnetoresistance and controlled by a spin–orbit torque generated by a 0.8 ns current pulse applied across the heavy-metal platinum layer.

    • Ao Du
    • Daoqian Zhu
    • Weisheng Zhao
    Research
    Nature Electronics
    Volume: 6, P: 425-433

  • Applications of van der Waals magnetic systems are typically hampered by the low Curie temperature of van der Waals magnets. Here, Wang et al use molecular beam epitaxy to grow large films of Fe4GeTe2 with Curie temperatures over 500 K, and the film’s magnetic anisotropy can be tuned arbitrarily by controlling stoichiometry.

    • Hangtian Wang
    • Haichang Lu
    • Tianxiao Nie
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-8