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Organic permeable base transistors for high-performance photodetection with photo-memory effect

Nature Photonics volume 19, pages 1088–1098 (2025)Cite this article

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Abstract

Organic semiconductor phototransistors have attracted remarkable academic and industry interest owing to their potential for applications in optoelectronic devices and for enhancing the performance of image sensors. Thanks to their high responsivity, typically attributed to substantial photoconductive gain mechanisms, these devices are well suited for detecting weak light. Here we introduce organic permeable base transistors as memory phototransistors, achieving high responsivity and detectivity. By leveraging the unique structure of organic permeable base transistors and conducting a detailed investigation into the underlying charge-storing mechanism, we achieve responsivity values as high as 109 A W−1, detectivity of 1015 Jones between 300 nm and 500 nm, and retention times exceeding 105 s. The excellent performance can be attributed to a charge carrier trapping process at the porous base electrode, as confirmed through comprehensive electrical and optical characterizations and technology computer-aided design (TCAD) simulations. These findings illustrate the potential of our organic permeable base transistors for sensitive photodetection applications, thereby paving the way for advancements in low-light imaging.

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Fig. 1: Structure and operating principles of the photo-OPBT.
Fig. 2: Operating modes of the OPBT detector.
Fig. 3: TCAD simulated OPBT transfer characteristics with trapped charges.
Fig. 4: Performance parameters of the photo-OPBTs.
Fig. 5: Detectivity and responsivity benchmarking of photo-OPBTs.

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The experimental data in the main figures are provided as source data in tabulated Excel files. Additional supporting data are available from the corresponding authors upon reasonable request. Source data are provided with this paper.

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Acknowledgements

We acknowledge funding for the project ‘FLEXMONIRS’ (01DR20008A) provided by the German Federal Ministry of Education and Research (BMBF) and the Koselleck-project (456344071) from the German Research Foundation (DFG). L.C.W. acknowledges the Graduate Academy project 2767 (GRK 2767) funded by DFG. G.D. acknowledges the DFG projects ‘DA 2578/2-1’ and ‘INST169/22-1’. H.K. acknowledges funding for DFG project KL 2961/10-1 (496804567) and 495141293. J.B. and L.C.W. gratefully acknowledges funding from the Federal Ministry of Research, Technology and Space (BMFTR) as part of the project to establish the German Center for Astrophysics (03WSP1745). We acknowledge M. Roth for stimulating discussions about detector applications and K.-G. Lim for discussions about the OPBTs.

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Authors and Affiliations

  1. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute of Applied Physics, TUD Dresden University of Technology, Dresden, Germany

    Jonas Schröder, Amric Bonil, Louis Conrad Winkler, Jan Frede, Juan Wang, Karl Leo, Hans Kleemann & Johannes Benduhn

  2. Zentrum für Technologieentwicklung, Deutsches Zentrum für Astrophysik, Görlitz, Germany

    Louis Conrad Winkler & Johannes Benduhn

  3. NanoP, TH Mittelhessen University of Applied Sciences, Giessen, Germany

    Ghader Darbandy

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  1. Jonas Schröder
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Contributions

J.S., K.L., H.K. and J.B. proposed and supervised the project. J.S., A.B. and J.W. designed and prepared the samples. J.S. designed the experiments together with A.B. and L.C.W. J.S. performed the device characterization and carried out the wavelength-dependent threshold analysis and noise measurements with L.C.W. G.D. performed the TCAD simulations. J.S. analysed the data, implemented the modelling of the observed effects and wrote the paper. J.F. analysed the OPBTs doped with absorber materials. All authors discussed the results and commented on the paper.

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Correspondence to Jonas Schröder or Johannes Benduhn.

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Schröder, J., Bonil, A., Winkler, L.C. et al. Organic permeable base transistors for high-performance photodetection with photo-memory effect. Nat. Photon. 19, 1088–1098 (2025). https://doi.org/10.1038/s41566-025-01740-y

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