Here, the authors report the characterization of stable few-layer PdSe2 transistors encapsulated in hexagonal boron nitride, showing field effect mobilities up to 700 cm2/Vs at room temperature and signatures of an 8-fold spin-valley degeneracy of the magnetotransport quantum oscillations at cryogenic temperatures.
- Yuxin Zhang
- Haidong Tian
- Chun Ning Lau
