Figure 2: The CAN-gated SrTiO3 FET.
From: Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
(a) A schematic illustration of the CAN-gated SrTiO3 FET. (b) Cross-sectional TEM image of the CAN-gated SrTiO3 FET (left panel). Scale bar is 100 nm. Trilayer structure composed of Ti/CAN/SrTiO3 is observed. Large amount of light spots are seen in the whole CAN region. Broad halo is observed in the selected area electron diffraction pattern of CAN, and diffraction pattern from SrTiO3 single crystal is also shown below (right panel). (c) Z-contrast, high-angle, annular dark-field STEM image of the CAN/SrTiO3 interface. Scale bar is 20 nm. Nanopores with diameter <10 nm appear dark. (d) TDS spectrum of water (m/z=18 H2O) in the CAN film (blue). The amount of H2O up to 400°C was estimated to be 1.4×1022 cm−3 (=0.41 g cm−3, ~41%). TDS spectrum in the dense a-C12A7 film is shown for comparison (red, 0.009 g cm−3). The water concentration increases monotonically with an increase in the porosity of the CAN films (the inset).
