Figure 3: Electron transport properties of the CAN-gated SrTiO3 FET at RT.
From: Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
(a) Id versus Vg, (b) Ig versus Vg and (c) C versus Vg, Id versus Vg (d), Ig versus Vg (e), and C versus Vg curves (f) of the dense a-C12A7-gated SrTiO3 FET are also shown for comparison. Both the channel length, L, and the channel width, W, are 400 μm. The gate voltage sweeps were performed in numerical order (for example: 1: −5 V→0 V→+5 V→0 V→–5 V). (a) Id versus Vg curves (Vd=+2 V) show large anticlockwise hysteresis, although very small clockwise hysteresis is seen in the dense one (d, Vd=+1 V). (b) Ig increases exponentially up to 20 nA with Vg, which is ~104 greater than that of the dense a-C12A7-gated SrTiO3 FET (e, red: observed, grey: smoothed). (c) The C versus Vg curve shows a large anticlockwise hysteresis loop. The maximum C (frequency: 20 Hz) of the nanoporous a-C12A7-gated SrTiO3 FET is ~160 pF, ~76% of that of the dense a-C12A7-gated SrTiO3 FET ((f) ~210 pF).
