Figure 4: A redox reaction switches an insulating SrTiO3 to metal.
From: Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
(a) Retention time dependences of Id and Ig for the CAN-gated SrTiO3 FET at several Vg at RT (Vd=+2 V). The Id increases gradually with retention time at constant Vg. Ion density, which is the retention time integral of Ig, reaches ~9×1016 cm−2 when Vg=+40 V is applied. (b) Rxx versus ion density for the state A–E marked in a at RT. The grey line (slope=–1) indicates Rxx=(e·nxx·μ)−1, where nxx and μ are ion density, and μFE (0.8 cm2 V−1 s−1), which was obtained as in Supplementary Figure S4b. (c) Temperature dependence of Rxx for the state A–E marked in Figure 4a.
