Figure 4: Fits to the I–V curves of Pt/BaTiO3 (BTO)/Nb:SrTiO3 ferroelectric tunnel junctions with a 4 u.c.-thick BTO barrier. | Nature Communications

Figure 4: Fits to the I–V curves of Pt/BaTiO3 (BTO)/Nb:SrTiO3 ferroelectric tunnel junctions with a 4 u.c.-thick BTO barrier.

From: Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Figure 4

(a,b) lnJF–V plots for the ON and the OFF states, respectively. The black solid lines are fits to equation (1). The inset in a is the ON state I–V curve of the junction with a Nb concentration of 1.0 wt%, where the cyan solid line is a fit to the direct tunnelling model. (c) Ideality factor n extracted from the fitting as a function of Nb concentration.

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