Figure 1: Device structure and microscopy.
From: Practical photon number detection with electric field-modulated silicon avalanche photodiodes
(a) Schematic representation of the lateral doping profile of an electric field-modulated Si-APD, shown in cross-section through the x–y plane. (b) Schematic representation of the lateral electric field profile in the x–y plane. (c) Dark-field emission micrograph, measured for a large dc bias applied beyond the reverse breakdown voltage. The scale bar corresponds to 10 μm. (d) Optical micrograph showing the uniform detector surface, as defined lithographically. The scale bar corresponds to 10 μm.
