Figure 3: Electroluminescence from InGaN dot-in-nanowire p–n junction diode.
From: Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
(a) Atomic force microscope image of a single dot-in-nanowire diode on (001) Si with Ti/Au ohmic contacts. The scale bar denotes 1 μm. The total thickness of the contacts is 50 nm. (b) Room temperature current–voltage characteristics measured after annealing the contacts at 450 °C in N2. (c) Electroluminescence from the dot-in-nanowire diode measured at 10 K for injection currents varying in the range 0.7–2.5 nA. (d) Integrated electroluminescence intensity of the exciton (squares) and biexciton (circles) transitions plotted as a function of injection current obtained from the data of c. The calculated solid lines indicate that the intensity of the exciton transition increases linearly with injection current (
I1.04±0.02) and that of the biexciton transition increases quadratically with injection current (I1.93±0.09).
