Figure 5: Characteristics of bottom-contact FETs after thermal annealing. | Nature Communications

Figure 5: Characteristics of bottom-contact FETs after thermal annealing.

From: Liquid crystals for organic thin-film transistors

Figure 5

Characteristics of bottom-gate, bottom-contact type FETs made with polycrystalline thin films of Ph-BTBT-10 after thermal annealing at 120 °C. (a) output characteristics and (b–d) transfer characteristics. Transfer characteristics focused on (c) hysteresis and (d) repeated measurement properties. dec, decade.

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