Figure 1: A typical Schottky barrier MOSFET transfer characteristic.
From: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
(a) Plot of the calculated transfer characteristic of an SB-MOSFET for Vds=−50 mV with 
and 
. The total current, Ids (open circles) is the sum of Ielectron and Ihole, plotted in red and blue, respectively. Key Vgs points on the transfer curve are labelled (i)–(iv), with the representative band diagrams drawn in b. (b) At each Vgs point labelled (i)–(iv), Ihole (blue arrows) and Ielectron (red arrows) are each made up of either thermionic emission current (thermal region) or a combination of tunnelling current and thermionic emission current (tunnelling region). (ii) and (iii) are the flat band voltages Vfb,D and Vfb,S, respectively.
