Figure 3: tbody dependence of measured electrical data from BP SB-MOSFET.
From: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
(a) False-coloured SEM image of a BP SB-MOSFET with permalloy contacts. The scale bar represents a length of 400 nm. All devices were fabricated in a back-gated geometry with thermally grown 20-nm-thick SiO2 as the gate oxide. (b) Representative AFM image of a BP flake and a line scan used to determine the flake thickness (c) Transfer characteristics at Vds=−50 mV for SB-MOSFETs with permalloy contacts on BP for different flake thicknesses (tbody). Note that device-to-device variations occasionally result in ‘outlier’ devices, which are included in our analysis (Fig. 4b,c). (d) Room temperature output characteristic of a 8-nm thick BP SB-MOSFET with permalloy contacts.
